Synthesis of high purity aluminum nitride nanopowder by RF induction thermal plasma
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چکیده
منابع مشابه
Thermal Plasma Synthesis of Crystalline Gallium Nitride Nanopowder from Gallium Nitrate Hydrate and Melamine
Gallium nitride (GaN) nanopowder used as a blue fluorescent material was synthesized by using a direct current (DC) non-transferred arc plasma. Gallium nitrate hydrate (Ga(NO₃)₃∙xH₂O) was used as a raw material and NH₃ gas was used as a nitridation source. Additionally, melamine (C₃H₆N₆) powder was injected into the plasma flame to prevent the oxidation of gallium to gallium oxide (Ga₂O₃). Argo...
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RF thermal plasma synthesis of zinc-ferrite nanopowders has been studied from metallurgical wastes of high iron oxide and zinc oxide and/or hydroxide content. XRD measurements of the products revealed that an extensive spinel formation took place on RF plasma treatment. However, instead of expectable ZnFe2O4, formation of zinc ferrous ferrites (Zn0,7Fe2,3O4 and Zn0,4Fe2,6O4) was concluded from ...
متن کاملSynthesis of Boron-Aluminum Nitride Thin Film by Chemical Vapour Deposition Using Gas Bubbler
Boron included aluminium nitride (B-AlN) thin films were synthesized on silicon (Si) substrates through chemical vapour deposition ( CVD ) at 773 K (500 °C). tert-buthylamine (tBuNH2) solution was used as nitrogen source and delivered through gas bubbler. B-AlN thin films were prepared on Si-100 substrates by varying gas mixture ratio of three precursors. The structural properties of the films ...
متن کاملsuppression of coke formation in thermal cracking by coke inhibitors
the main purpose of this research was to:1.develop a coking model for thermal cracking of naphtha.2.study coke inhibition methods using different coke inhibitors.developing a coking model in naphtha cracking reactors requires a suitable model of the thermal cracking reactor based on a reliable kinetic model.to obtain reliable results all these models shall be solved simultaneously.for this pu...
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ژورنال
عنوان ژورنال: Journal of the Korean Crystal Growth and Crystal Technology
سال: 2014
ISSN: 1225-1429
DOI: 10.6111/jkcgct.2014.24.1.001